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NCP5901B
12V_POWER
TP1
R1
1.02
R164
0.0
C4
0.027uF
TP2
Q1
NTMFS4821N
C1
4.7uF
C2
4.7uF
C3
4.7uF
+
CE9
390uF
R143
NCP5901B TP3
R142
TP6
TP4
PWM
DRON
0.0
BST HG
PWM SW
EN GND
VREG_SW1_HG
VREG_SW1_OUT
TP7
0.0
TP5
R3
L
235nH
VCCP
VCC
PAD
LG
VREG_SW1_LG
Q9
NTMFS4851N
Q10
NTMFS4851N
2.2
JP13_ETCH CSN11
C5
1uF
TP8
C6
2700pF
JP14_ETCH CSP11
Figure 3. Application Circuit
Table 2. ABSOLUTE MAXIMUM RATINGS
Pin Symbol
VCC
BST
Pin Name
Main Supply Voltage Input
Bootstrap Supply Voltage
V MAX
15 V
35 V wrt/ GND
V MIN
? 0.3 V
? 0.3 V wrt/SW
40 V ≤ 50 ns wrt/ GND
15 V wrt/ SW
SW
DRVH
Switching Node
(Bootstrap Supply Return)
High Side Driver Output
35 V
40 V ≤ 50 ns
BST+0.3 V
? 5 V
? 10 V (200 ns)
? 0.3 V wrt/SW
? 2 V (<200 ns) wrt/SW
DRVL
Low Side Driver Output
VCC+0.3 V
? 0.3 V DC
? 5 V (<200 ns)
PWM
EN
GND
DRVH and DRVL Control Input
Enable Pin
Ground
6.5 V
6.5 V
0V
? 0.3 V
? 0.3 V
0V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. THERMAL INFORMATION (All signals referenced to AGND unless noted otherwise)
Symbol
Parameter
Value
Unit
R q JA
Thermal Characteristic
SOIC Package (Note 1)
DFN Package (Note 1)
123
74
° C/W
T J
T A
T STG
Operating Junction Temperature Range (Note 2)
Operating Ambient Temperature Range
Maximum Storage Temperature Range
0 to 150
? 10 to +125
? 55 to +150
° C
° C
° C
MSL
Moisture Sensitivity Level
SOIC Package
DFN Package
1
1
* The maximum package power dissipation must be observed.
1. I in 2 Cu, 1 oz thickness.
2. Operation at ? 40 ° C to ? 10 ° C guaranteed by design, not production tested.
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